Title:
MINUTE PATTERN FORMING METHOD
Document Type and Number:
Japanese Patent JPS5898924
Kind Code:
A
Abstract:
PURPOSE:To prevent the degradation of the contour of the pattern due to the phenomena such as diffraction and scattering of light and reflection of light at the interface between a photoresist and a substrate, by stopping exposure and development at a leyr in the photoresist film having a specified depth, and performing dry etching at the part deeper than said layer. CONSTITUTION:The semiconductor substrate 1 is coated by a pattern forming film 2, and the positive type photoresist 3 is applied by a spinner method. By using the photomask, the exposure and development are performed. At this time, the exposing time is made 1/2-1/3 the conventional time, and the thickness is made about 1.0mum from the surface of the resist. Then, the photoresist is dissolved by the developing liquid and a removed parts 5 are formed. Resists 6 directly beneath the parts are made to remain by 0.5-1.5mum. The resists 6 are etched away to the interface of the coating fim 2. With the remaining resist 3 as a mask, the ground coating film 2 is etched by an anisotropic etching device. Then, the resist mask 3, used as the etching mask, is removed.
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Inventors:
NAKAMOTO NORIO
MASAKI KIMIE
HAYASHI AKIYO
MASAKI KIMIE
HAYASHI AKIYO
Application Number:
JP19811481A
Publication Date:
June 13, 1983
Filing Date:
December 08, 1981
Export Citation:
Assignee:
MATSUSHITA ELECTRONICS CORP
International Classes:
H01L21/302; G03F7/26; G03F7/30; G03F7/36; G03F7/38; H01L21/027; H01L21/306; H01L21/3065; (IPC1-7): H01L21/30; H01L21/302
Domestic Patent References:
| JPS5228267A | 1977-03-03 | |||
| JPS5633827A | 1981-04-04 |
Attorney, Agent or Firm:
Toshio Nakao