Title:
MIS TYPE TRANSISTOR ELEMENT USING VOLATILE RAW MATERIAL AND SEMICONDUCTOR DEVICE HAVING IT
Document Type and Number:
Japanese Patent JP3930407
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a volatile raw material for an MIS type semiconductor element which is fixed-charge free, can be supplied stably to a gate insulation film for ensuring the capacitance of a fined gate transistor by restraining a leak current and can restrain impurities in a formed film.
SOLUTION: In the MIS (Metal Insulator Semiconductor) type transistor element, a silicon single crystalline substrate is used for its base material. A gate insulation film of a semiconductor element is formed of the volatile raw material expressed by Hf(NO3)4 × L (wherein L is molecular base) by a chemical vapor-phase growth method or an atomic layer control growth method.
Inventors:
Toshihide Ikutame
Go Horikawa
Kinoshita Isamu
Kiyoshi Isobe
Go Horikawa
Kinoshita Isamu
Kiyoshi Isobe
Application Number:
JP2002275532A
Publication Date:
June 13, 2007
Filing Date:
September 20, 2002
Export Citation:
Assignee:
Renesas Technology Corp.
International Classes:
H01L21/316; H01L29/78; C07F7/00; (IPC1-7): H01L29/78; H01L21/316
Domestic Patent References:
| JP2000208508A | ||||
| JP2002060944A | ||||
| JP2014821A | ||||
| JP3141118A | ||||
| JP2088408A | ||||
| JP2243504A |
Attorney, Agent or Firm:
Polaire Patent Business Corporation
Katsuo Ogawa
Kaneo Miyata
Katsuo Ogawa
Kaneo Miyata
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