Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
MMI TYPE SEMICONDUCTOR LASER AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2005072526
Kind Code:
A
Abstract:

To prevent fluctuation in element performance by reducing light loss and current leak in an MMI type semiconductor laser wherein a multimode waveguide which is wider than a basic mode waveguide is connected to the basic mode waveguide.

A laminated film comprising an active layer and a clad layer is formed on a substrate. A mesa part comprising a basic mode waveguide 102 and a multimode wavegudie 104 is formed by selectively removing the clad layer and the active layer. A semiconductor layer is formed to bury a periphery of the mesa part. An end face of the multimode waveguide tilts to surfaces which are equivalent to a (100) surface or a vertical line of a substrate surface to the surfaces, and the mesa part is shaped to include a surface with an off angle less than 7 degree to a substrate surface direction.


Inventors:
SHIBA KAZUHIRO
NANBAE KOICHI
Application Number:
JP2003304001A
Publication Date:
March 17, 2005
Filing Date:
August 28, 2003
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
NEC CORP
International Classes:
H01S5/227; H01S5/20; H01S5/323; (IPC1-7): H01S5/227; H01S5/20; H01S5/323
Domestic Patent References:
JPH01184896A1989-07-24
JPH07211981A1995-08-11
JP2000323781A2000-11-24
JPH1168241A1999-03-09
JPH06125132A1994-05-06
JP2001111170A2001-04-20
JPH07193329A1995-07-28
JPH10300959A1998-11-13
JPH01184896A1989-07-24
JPH07211981A1995-08-11
JP2000323781A2000-11-24
JPH1168241A1999-03-09
JPH06125132A1994-05-06
JP2001111170A2001-04-20
JPH07193329A1995-07-28
JPH10300959A1998-11-13
Attorney, Agent or Firm:
Shinji Hayami