To prevent fluctuation in element performance by reducing light loss and current leak in an MMI type semiconductor laser wherein a multimode waveguide which is wider than a basic mode waveguide is connected to the basic mode waveguide.
A laminated film comprising an active layer and a clad layer is formed on a substrate. A mesa part comprising a basic mode waveguide 102 and a multimode wavegudie 104 is formed by selectively removing the clad layer and the active layer. A semiconductor layer is formed to bury a periphery of the mesa part. An end face of the multimode waveguide tilts to surfaces which are equivalent to a (100) surface or a vertical line of a substrate surface to the surfaces, and the mesa part is shaped to include a surface with an off angle less than 7 degree to a substrate surface direction.
NANBAE KOICHI
JPH01184896A | 1989-07-24 | |||
JPH07211981A | 1995-08-11 | |||
JP2000323781A | 2000-11-24 | |||
JPH1168241A | 1999-03-09 | |||
JPH06125132A | 1994-05-06 | |||
JP2001111170A | 2001-04-20 | |||
JPH07193329A | 1995-07-28 | |||
JPH10300959A | 1998-11-13 | |||
JPH01184896A | 1989-07-24 | |||
JPH07211981A | 1995-08-11 | |||
JP2000323781A | 2000-11-24 | |||
JPH1168241A | 1999-03-09 | |||
JPH06125132A | 1994-05-06 | |||
JP2001111170A | 2001-04-20 | |||
JPH07193329A | 1995-07-28 | |||
JPH10300959A | 1998-11-13 |