To provide a modulator integrated type semiconductor laser device.
The modulator integrated semiconductor laser device includes a substrate (60), a lower distributed Bragg reflector layer (61) formed on the substrate (60), an active layer (62, 66) which is formed on the lower distributed Bragg reflector layer (61) and includes a plurality of barrier layers (64, 65b, and 65c) alternating with a plurality of quantum well layers (63, 65c), and an external mirror (71) which is spaced apart from a top of the active layer (62, 66) to output a portion of light emitted from the active layer (62, 66) by transmission and to reflect the remainder to the active layer (62, 66). Two of the plurality of barrier layers (65a, 65b) that contact both sides of at least one (65c) of the plurality of quantum well layers (65c) respectively are doped with different types.
Yasuo Nara
Katsuyuki Utani