MOLECULAR BEAM EPITAXIAL GROWTH METHOD

Title:

MOLECULAR BEAM EPITAXIAL GROWTH METHOD

Document Type and Number:

Japanese Patent JPH0558795

Kind Code:

A

Abstract:

PURPOSE:To reduce the carrier concn. of undoped AlxGa1-xSb crystals formed by a molecular beam epitaxial method. CONSTITUTION:By a molecular beam epitaxial method, n+-GaSb is grown on an n+-GaSb substrate and then a multilayered structure composed of alternately laminated crystals of undoped AlxGa1-xSb and undoped GaSb is epitaxially grown. Since the undoped AlxGa1-xSb having high carrier concn. and the undoped GaSb having low carrier concn. are formed into the multilayered structure, the carrier concn. of the structure is effectively reduced.

Inventors:

FUKUSHIMA ATSUSHI

Application Number:

JP22574091A

Publication Date:

March 09, 1993

Filing Date:

September 05, 1991

Export Citation:

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Assignee:

NEC CORP

International Classes:

C30B29/40; H01L21/203; H01L21/363; H01L31/10; (IPC1-7): C30B29/40; H01L21/203; H01L21/363; H01L31/10

Attorney, Agent or Firm:

Uchihara Shin

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