Title:
MONOCRYSTALLINE WAFER MATERIAL FOR FORMING SUPERCONDUCTIVE CERAMIC THIN FILM FOR MANUFACTURING SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JPH01305580
Kind Code:
A
Abstract:
PURPOSE:To elevate the critical temperature of a superconductive thin film, by forming a five-component superconductive ceramic thin film on the surface of a monocrystalline wafer material through a four-component intermediate ceramic thin film. CONSTITUTION:A five-component superconductive ceramic film of Tl-Ca-Ba-Cu- O is formed on the surface of a monocrystalline wafer material of Si or Ga-As through a four-component intermediate ceramic thin film of Tl-Ca-Ba-O. Forming the intermediate ceramic of 500-2000Angstrom thickness provides the superconductive thin film with the desired critical temperature effect and enables economically forming the film. The superconductive ceramic thin film constituting this monocrystalline wafer material with a superconductive ceramic thin film formed thereon has a high critical temperature. Semiconductor elements made of this material are suitable for the improvement of performance and packaging density and show the useful characteristics in industrial use.
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Inventors:
SUGIHARA TADASHI
TAKESHITA TAKUO
TAKESHITA TAKUO
Application Number:
JP13673188A
Publication Date:
December 08, 1989
Filing Date:
June 03, 1988
Export Citation:
Assignee:
MITSUBISHI METAL CORP
International Classes:
C30B29/22; C04B35/45; C23C14/08; C30B23/02; H01B12/06; H01L39/02; H01L39/24; (IPC1-7): C23C14/08; C30B29/22; H01B12/06; H01L39/02
Attorney, Agent or Firm:
Kazuo Tomita (1 person outside)