Title:
MONOLITHIC INTEGRATED RESISTANCE STRUCTURE HAVING POWER IGBT DEVICE
Document Type and Number:
Japanese Patent JP2005033199
Kind Code:
A
Abstract:
To provide a monolithic integrated high-voltage resistance structure having an IGBT(insulated gate bipolar transistor) device which has structural and functional characteristics capable of suppressing the occurrence of a parasitic transistor and which overcomes a limited condition and defect affecting the above conventional devices.
In the device in which a second conductive semiconductor layer(19) is integrated on a laminated first conductive semiconductor substrate(16) and which includes a resistance structure(17) for voltage control and an IGBT device(18), the resistance structure(17) surrounds a part(22) of the semiconductor layer(19), shows the first conductive type, and includes at least one of substantially ring-like regions(21a).
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Inventors:
PATTI DAVIDE
TORRES ANTONINO
TORRES ANTONINO
Application Number:
JP2004196957A
Publication Date:
February 03, 2005
Filing Date:
July 02, 2004
Export Citation:
Assignee:
ST MICROELECTRONICS SRL
International Classes:
H01L29/739; H01L29/78; (IPC1-7): H01L29/78
Attorney, Agent or Firm:
Kosaku Sugimura
Kazuaki Takami
Hiroshi Tokunaga
Shiro Fujitani
Kiyoshi Kuruma
Kazuyuki Tomita
Junichi Aso
Kazuaki Takami
Hiroshi Tokunaga
Shiro Fujitani
Kiyoshi Kuruma
Kazuyuki Tomita
Junichi Aso