Title:
アンテナスイッチとダイプレクサのモノリシックな集積
Document Type and Number:
Japanese Patent JP6692908
Kind Code:
B2
Abstract:
An integrated radio frequency (RF) circuit structure may include a resistive substrate material and a switch. The switch may be arranged in a silicon on insulator (SOI) layer supported by the resistive substrate material. The integrated RF circuit structure may also include an isolation layer coupled to the SOI layer. The integrated RF circuit structure may further include a filter, composed of inductors and capacitors. The filter may be arranged on a surface of the integrated RF circuit structure, opposite the resistive substrate material. In addition, the switch may be arranged on a first surface of the isolation layer.
Inventors:
Sichun Gu
Change et zuo
Steve Fanelli
Thomas G
Yong Kyu Sung
Change et zuo
Steve Fanelli
Thomas G
Yong Kyu Sung
Application Number:
JP2018534945A
Publication Date:
May 13, 2020
Filing Date:
November 29, 2016
Export Citation:
Assignee:
Qualcomm, Inc.
International Classes:
H01L21/822; H01L21/8234; H01L27/04; H01L27/06; H03H7/01; H04B1/00; H04B1/38
Domestic Patent References:
| JP2009539239A | ||||
| JP2015508621A | ||||
| JP2007165922A | ||||
| JP2011193191A | ||||
| JP2015503228A | ||||
| JP2003224195A |
Attorney, Agent or Firm:
Yasuhiko Murayama
Kuroda Shinpei
Kuroda Shinpei