Title:
MONOLITHIC PART
Document Type and Number:
Japanese Patent JPH0758288
Kind Code:
A
Abstract:
PURPOSE: To enable absorbing high overcharge by connecting a plurality of pairs of diode, directed to have same polarity as a protective diode, with a protection diode. CONSTITUTION: In the monolithic component, the anodes of diode, i.e., P-type regions P'1, P'2,..., are formed from the upper surface of a substrate 1, and the cathodes N1, N2,... are formed in the regions defined laterally by the P-type insulation wall 2 of the substrate 1 to terminate in a P-type region 3 formed from the lower surface of the substrate. The anode of an avalanche diode is a deep P<+> -type region 4 and the cathode is an N<+> -type region 5. Electrodes M1, M2,... connect the regions P'1, P'2,... with an over doped region 6 formed in the regions N1, N2,.... An electrode 10 is formed on the surface of the insulation wall 2. An electrode 11 is formed entirely on the lower surface of the substrate 1, in order to improve the conductivity between the common cathode 3 of the diode and the cathode region 5 of the avalanche diode.
Inventors:
ROBEERU PEZAANI
Application Number:
JP18907894A
Publication Date:
March 03, 1995
Filing Date:
July 20, 1994
Export Citation:
Assignee:
SGS THOMSON MICROELECTRONICS
International Classes:
H01L27/04; H01L21/822; H01L27/02; H01L27/08; (IPC1-7): H01L27/04; H01L21/822
Attorney, Agent or Firm:
Keiichi Yamamoto
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