MONOLITHIC SEMICONDUCTOR DEVICE

Japanese Patent JPS571224

A

PURPOSE:To have a silicon device and a compound semiconductor device formed in one body by a method wherein a unipolar semiconductor and a compound semiconductor are provided on the same substrate and a part of the crystalline semiconductor film of either of the semiconductor is formed on the cyclic irregular surface, to be used for graph-epitaxial, consisting of an insulating material. CONSTITUTION:The cyclic irregular face 2, to be used for grapho-epitaxial, is formed on the semi-insulating GaAs substrate 1 by performing a selective etching and a part of which is formed into an insulated film 8 by performing an anodic oxidation. Then, on a part of the surface, an undoped GaAl layer 4, a P type GaAlAs layer 5, a P type GaAs layer 6 are grown by laminating, an upper electrode 7 to be used as a laser section is coated on the end section of the above layers and on the other end of the surface which is contacting the electrode 7, an Si layer 9 is grown, covered by a thick SiO2 film 10, its center part is formed with a thin SiO2 film 10', an electrode 11 is covered on the film 10' and this section is used as an FET. Through these procedures, a laser oscillation control is performed by the FET and the device can be formed in one body.

JPS60254666	MANUFACTURE OF FET
JPS58194330	SEMICONDUCTOR VAPOR GROWTH APPARATUS

KOMIYA YOSHIO
TAKAHASHI TETSUO
SAKAMOTO SUMINORI
KAWANAMI HITOSHI

JP7513580A

January 06, 1982

June 04, 1980

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KOGYO GIJUTSUIN

H01L29/80; H01L21/20; H01L21/205; H01L21/338; H01L21/86; H01L29/812; H01S5/00; H01S5/026; (IPC1-7): H01L21/208; H01L21/324; H01L21/86; H01L29/80; H01S3/18

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