Title:
MOS FIELD EFFECT TRANSISTOR
Document Type and Number:
Japanese Patent JP2716303
Kind Code:
B2
Abstract:
PURPOSE: To provide MOS FETs capable of higher-density integration by making the width of a field oxide region (FOX) smaller and widening the width of an active region larger, by a simple method performable by the use of a conventional CMOS process.
CONSTITUTION: Regions of a source 16 and the drain 16' are self-aligned to the gate electrode 14, and held on an insulating oxide layer 7 by the layer 7 which is buried in a single-crystal silicon substrate 1 shallowly. And the bottom part of a channel region is connected to the silicon substrate.
Inventors:
Albert O'Adan
Application Number:
JP32331791A
Publication Date:
February 18, 1998
Filing Date:
December 06, 1991
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L29/78; H01L29/786; (IPC1-7): H01L29/78
Attorney, Agent or Firm:
Shintaro Nogawa