Title:
MOS RANDOM ACCESS MEMORY
Document Type and Number:
Japanese Patent JPS5352325
Kind Code:
A
Abstract:
PURPOSE: To enable a reading through a smaller potential change of a digit line for a MOS random access memory by reading the potential change appearing at the digit line out to the output line via MOSFET.
Inventors:
MATSUKI KOUJI
MASUOKA FUJIO
MASUOKA FUJIO
Application Number:
JP12795776A
Publication Date:
May 12, 1978
Filing Date:
October 25, 1976
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
G11C11/417; G11C11/40; G11C11/412; (IPC1-7): G11C11/40
Domestic Patent References:
| JPS5088944A | 1975-07-17 | |||
| JPS49131744A | 1974-12-17 |