Title:
MOS SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JPH06334133
Kind Code:
A
Abstract:
PURPOSE: To prevent the electrostatic breakdown of a gate oxide film by a simple constitution when an overvoltage is applied to a gate electrode regarding a MOS semiconductor device which constitutes a CMOS inverter and regarding its manufacturing method.
CONSTITUTION: A MOS semiconductor device is provided with a gate electrode 4 which passes the boundary part between channel regions 8, 9 between source electrodes 10, 11 and a drain electrode 12 and a field oxide film 2 which decides the channel regions 8, 9. The MOS semiconductor device is constituted in such a way that the boundary part between the channel regions 8, 9 on a face on which the gate electrode 4 has been formed and the field oxide film 2 is flat.
Inventors:
INOUE SHINICHI
Application Number:
JP11693093A
Publication Date:
December 02, 1994
Filing Date:
May 19, 1993
Export Citation:
Assignee:
FUJITSU LTD
KYUSHU FUJITSU ELECTRONIC
KYUSHU FUJITSU ELECTRONIC
International Classes:
H01L27/092; H01L21/8238; H01L29/78; (IPC1-7): H01L27/092; H01L29/784
Attorney, Agent or Firm:
Teiichi
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