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Title:
MOS TRANSISTOR DRIVING CIRCUIT
Document Type and Number:
Japanese Patent JPS5839117
Kind Code:
A
Abstract:

PURPOSE: To obtain pulses having a power source voltage or higher, by connecting one end of the second capacitance to the output terminal of the output circuit, which is driven with the high potential of the power source voltage by the boosting function of the capacitance, and applying driving pulses to the other end.

CONSTITUTION: When the potential at a node point 30 rises from a low level to a high level, a capacitance 28 is charged with the rise potential at a node point 33. Then, when the output of an inverter 27 starts rising, the potential at the node point 33 rises furthermore to attain a power source voltage VCC or higher. Consequently, an MOSFET 23 is turned on sufficiently, and the power source voltage VCC is outputted to a node point 34. At this time, when a write signal rises, a pulse output having a potential higher than the power source voltage VCC is obtained on a word line OUT as the output.


Inventors:
KABURU SETSUSHI
Application Number:
JP9818182A
Publication Date:
March 07, 1983
Filing Date:
June 07, 1982
Export Citation:
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Assignee:
SHARP KK
International Classes:
G11C11/413; G11C11/407; G11C11/412; G11C11/418; H03K5/02; H03K17/06; H03K19/094; (IPC1-7): G11C11/34; H03K5/02; H03K17/687; H03K19/094
Domestic Patent References:
JPS5457857A1979-05-10
JPS55136723A1980-10-24
Attorney, Agent or Firm:
Sugiyama Takeshi