Title:
MRAM DEVICE INCLUDING OFFSET CONDUCTOR
Document Type and Number:
Japanese Patent JP2003142662
Kind Code:
A
Abstract:
To increase the maximum switching magnetic field which can be added to a magnetoresistance device without reducing memory density.
A magnetic random access memory (MRAM) includes an array (12) of cells (14), and a plurality of first conductors on a first side of the array (12). The first conductors are stretched in a first direction and offset against at least some number of the cells out of the memory cells (14).
Inventors:
SHARMA MANISH
BHATTACHARYYA MANOJ
BHATTACHARYYA MANOJ
Application Number:
JP2002224583A
Publication Date:
May 16, 2003
Filing Date:
August 01, 2002
Export Citation:
Assignee:
HEWLETT PACKARD CO
International Classes:
H01L27/105; G11C11/15; H01L21/8246; H01L43/08; (IPC1-7): H01L27/105; H01L43/08
Attorney, Agent or Firm:
Kaoru Furuya (3 outside)
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