Title:
MRAM MODULE STRUCTURE
Document Type and Number:
Japanese Patent JP2002164515
Kind Code:
A
Abstract:
To provide an MRAM module structure wherein high packing density of memory cell sections is achieved.
This MRAM module structure is constituted of a plurality of memory cell sections (A, P). The respective memory cell sections (A, P) are constituted of memory arrays (A) having a plurality of memory cells (WML, TL, HML) and peripheral circuits (P) surrounding edges of the memory arrays (A). The peripheral circuits (P) surround the memory arrays (A) in such a manner that the respective memory cell sections (A, P) have a cross structure in a plane, essentially. The memory cell sections (A, P) are so nested in each other that the memory cell sections (A, P) are offset mutually on individual rows (1, 2, 3).
Inventors:
BOEHM THOMAS
GOGL DIETMAR
FREITAG MARTIN
LAMMERS STEFAN
GOGL DIETMAR
FREITAG MARTIN
LAMMERS STEFAN
Application Number:
JP2001275812A
Publication Date:
June 07, 2002
Filing Date:
September 11, 2001
Export Citation:
Assignee:
INFINEON TECHNOLOGIES AG
International Classes:
G11C11/14; G11C5/02; G11C11/15; G11C11/16; H01L21/8246; H01L27/10; H01L27/105; H01L27/22; H01L43/08; (IPC1-7): H01L27/105; G11C11/14; G11C11/15; H01L27/10; H01L43/08
Attorney, Agent or Firm:
Shusaku Yamamoto
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