Title:
MULTI-BEAM SEMICONDUCTOR LASER
Document Type and Number:
Japanese Patent JP2009238989
Kind Code:
A
Abstract:
To provide a facet emitting multi-beam semiconductor laser having a structure capable of reducing the difference in the rotation of polarization of a laser beam.
A facet emitting multi-beam semiconductor laser includes juxtaposed stripe-shaped light-emitting portions 10, the number of which is N (where N2), wherein a separation groove 160 that electrically separates the light-emitting portions 10 from each other is provided between the light-emitting portions 10; a first recess 161 that is partly discontinuous is provided outside a first light-emitting portion 101; and a second recess 162 that is partly discontinuous is provided outside an Nth light-emitting portion 102.
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Inventors:
KANO YOSHIO
Application Number:
JP2008082709A
Publication Date:
October 15, 2009
Filing Date:
March 27, 2008
Export Citation:
Assignee:
SONY CORP
International Classes:
H01S5/22; H01S5/042
Domestic Patent References:
JP2000269601A | 2000-09-29 | |||
JPH06326420A | 1994-11-25 | |||
JP2004193303A | 2004-07-08 | |||
JP2000216500A | 2000-08-04 | |||
JPH08293641A | 1996-11-05 | |||
JP2002164606A | 2002-06-07 | |||
JP2007095736A | 2007-04-12 | |||
JPH11354888A | 1999-12-24 | |||
JP2005045146A | 2005-02-17 | |||
JPH03206678A | 1991-09-10 | |||
JP2001274511A | 2001-10-05 | |||
JPH1070336A | 1998-03-10 | |||
JP2002057401A | 2002-02-22 |
Attorney, Agent or Firm:
Takahisa Yamamoto
Masaaki Yoshii
Masaaki Yoshii