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Title:
MULTI-BEAM SEMICONDUCTOR LASER
Document Type and Number:
Japanese Patent JP2009238989
Kind Code:
A
Abstract:

To provide a facet emitting multi-beam semiconductor laser having a structure capable of reducing the difference in the rotation of polarization of a laser beam.

A facet emitting multi-beam semiconductor laser includes juxtaposed stripe-shaped light-emitting portions 10, the number of which is N (where N2), wherein a separation groove 160 that electrically separates the light-emitting portions 10 from each other is provided between the light-emitting portions 10; a first recess 161 that is partly discontinuous is provided outside a first light-emitting portion 101; and a second recess 162 that is partly discontinuous is provided outside an Nth light-emitting portion 102.


Inventors:
KANO YOSHIO
Application Number:
JP2008082709A
Publication Date:
October 15, 2009
Filing Date:
March 27, 2008
Export Citation:
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Assignee:
SONY CORP
International Classes:
H01S5/22; H01S5/042
Domestic Patent References:
JP2000269601A2000-09-29
JPH06326420A1994-11-25
JP2004193303A2004-07-08
JP2000216500A2000-08-04
JPH08293641A1996-11-05
JP2002164606A2002-06-07
JP2007095736A2007-04-12
JPH11354888A1999-12-24
JP2005045146A2005-02-17
JPH03206678A1991-09-10
JP2001274511A2001-10-05
JPH1070336A1998-03-10
JP2002057401A2002-02-22
Attorney, Agent or Firm:
Takahisa Yamamoto
Masaaki Yoshii



 
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