Title:
パーコレーション・アルゴリズムを使用した相変化メモリセルの多重レベルプログラミング方法
Document Type and Number:
Japanese Patent JP2008546124
Kind Code:
A
Abstract:
A method and apparatus for programming a phase change memory cell (2) is disclosed. A phase change memory cell (2) includes a memory element (10) of a phase change material having a first state ("11"), in which the phase change material is crystalline and has a minimum resistance level, a second state ("00") in which the phase change material is amorphous and has a maximum resistance level, and a plurality of intermediate states with resistance levels there between. The method includes using programming pulses to program the phase change memory cell (2) in either the set, reset, or one of the intermediate states. To program in the intermediate states, a programming pulse creates a crystalline percolation path having an average diameter (D) through amorphous phase change material and a second programming pulse modifies the diameter (D) of the crystalline percolation path to program the phase change memory cell to the proper current level.
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Inventors:
Fabio Peritzer
Agostino Pirovano
Agostino Pirovano
Application Number:
JP2008514105A
Publication Date:
December 18, 2008
Filing Date:
June 01, 2006
Export Citation:
Assignee:
STMicroelectronics S.r.l.
International Classes:
G11C13/00; H01L27/10; H01L27/105; H01L45/00
Foreign References:
| US20040114419A1 | 2004-06-17 |
Attorney, Agent or Firm:
Kenji Sugimura
Kosaku Sugimura
Kiyoshi Kuruma
Shiro Fujitani
Tatsuya Sawada
Eiji Fujiwara
Kosaku Sugimura
Kiyoshi Kuruma
Shiro Fujitani
Tatsuya Sawada
Eiji Fujiwara