Title:
MULTI-PHASE LEAD GERMANATE FILM AND DEPOSITING METHOD
Document Type and Number:
Japanese Patent JP3683159
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To control the grain size of a first layer of a PGO film, usable for memory cells of 1T type FeRAMs for optimizing the quality of the formed film by forming the PGO film as a double-layer structure.
SOLUTION: This method is a process for forming a PbGe oxide(PGO) film on an integrated circuit(IC) film which comprises step 102 of mixing Pb(thd)2 with Ge(ETO)4, to form a first PGO mixture having a prescribed mol ratio, step 104 of dissolving the mixture in step 102 with solvents of tetrahydrofuran, isopropanol and tetraglym to form a precursor solution, step 106 of heating the solution formed in step 104 to produce a precursor gas, step 108 of introducing the precursor gas into the IC film, and step of 112 of decomposing the precursor gas produced in step 106 on the IC film, to form a PGO film having strong elastic property and involving a first phase of PbbGe3O11 and a second phase of Pb3GeO5, so as to add the second phase for improving the ferroelectric property of the PGO film.
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Inventors:
Ting Kai Lee
Fenyang Zank
Shen Ten Suu
Fenyang Zank
Shen Ten Suu
Application Number:
JP2000131696A
Publication Date:
August 17, 2005
Filing Date:
April 28, 2000
Export Citation:
Assignee:
Sharp Corporation
International Classes:
C30B29/22; C23C16/40; H01L21/205; H01L21/316; H01L21/8242; H01L21/8246; H01L27/10; H01L27/105; H01L27/108; H01L21/02; (IPC1-7): H01L21/316; C30B29/22; H01L21/8242; H01L27/10; H01L27/108
Domestic Patent References:
| JP8277196A | ||||
| JP2001007103A | ||||
| JP2000315770A | ||||
| JP2001007104A | ||||
| JP2000353790A |
Other References:
Tingkai Li et.al.,The ferroelectric properties of c-axis oriented Pb5Ge3O11 thin films prepared by metalorganic chemic,Appl. Phys. Lett.,米国,American Institute of Physics,1999年 1月11日,vol.74,no.2,p.296-298
Attorney, Agent or Firm:
Hidesaku Yamamoto
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