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Title:
MULTILAYER COMPOUND METAL STRIP MOUNTING SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JPS6053037
Kind Code:
A
Abstract:
PURPOSE:To enhance the heat conduction characteristic in the plate thickness direction of a compound metal strip, and to smooth radiation of Joule heat generated from a semiconductor element by a method wherein an Fe alloy strip having a plural number of penetrating holes is used as the inside layer of the multilayer compound metal strip for loading of a semiconductor element. CONSTITUTION:A multilayer compound metal strip is consisting of the multilayer of a Cu layer 11 and an Fe alloy layer, a 42-alloy layer 12 for example, and penetrating hole parts 13 are provided partially to the 42-alloy layer 12 thereof. Accordingly, the Cu layers 11 existing on both the sides of the 42-alloy layers 12 come in contact directly mutually at the parts of the penetrating hole parts 13 thereof, and the coefficient of thermal conductivity in the plate thickness direction is improved. Moreover, because the mechanical properties of a substrate are reduced extremely when the penetrating holes of the plural number of pieces to be provided to the Fe alloy strip exceed 50%, 10-50% of the surface area is suitable.

Inventors:
ISHIBE HIROSHI
OGASA NOBUO
OOTSUKA AKIRA
TSUJIOKA MASANORI
Application Number:
JP16236783A
Publication Date:
March 26, 1985
Filing Date:
September 01, 1983
Export Citation:
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Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
B32B15/01; H01L21/52; H01L21/58; (IPC1-7): B32B15/01
Domestic Patent References:
JPS55159967A1980-12-12
JPS5812957A1983-01-25
JPS5690546A1981-07-22
Attorney, Agent or Firm:
Akira Wada