PURPOSE: To improve characteristic impedance matching between a semiconduc tor IC element and a multilayer interconnection board by forming a thin film electric resistor close to a main conductor, in the multilayer interconnection board wherein an interlayer insulator made of high molecular material and a main conductor are sequentially formed on the surface of an insulating board.

CONSTITUTION: A multilayer interconnection board is so formed that on an interlayer insulating film 2 made of a high molecular material formed on the surface of an insulating board 1, an interlayer insulating film 6, similar to the film 2, is formed. Major conductors 3, 5 are embedded in the film 6, and a thin electric resistor 4 is formed in contact therewith. An impedance between a semiconductor IC element and a multilayer interconnection board mounted on the board is matched by the resistor 4, thereby reducing crosstalk and trans mitting distortion free high-frequency electric signals. As a result, a multilayer interconnection board with high degree of density and integration suitable for high speed signal transmission applications can be prepared.