To provide technique such that a multilayer substrate having aluminum nitride and copper laminated has no crack in an insulating layer no matter how many times thermal loads of heating and cooling are placed repeatedly.
The multilayer substrate 2 has the insulating layer 6 of aluminum nitride and a conductive layer 4 of copper formed on the insulating layer 6. The conductive layer 4 has a thick portion 4a and a thin portion 4b. Part of the thick portion 4a forms a bonding region for bonding a semiconductor device. The thin portion 4b is provided outside the bonding region and formed thinner than the bonding region. The thin portion 4b is formed to a thickness of 0.05 mm within a range of at least 1.2 mm from an outer periphery of the conductive layer 4.
WADA KENSUKE
YAMADA YASUSHI
ATSUMI TAKASHI
NAKAGAWA IKURO
TOYOTA MOTOR CORP
| JP2006286754A | 2006-10-19 | |||
| JP2003324167A | 2003-11-14 | |||
| JPS6459986A | 1989-03-07 | |||
| JPH104156A | 1998-01-06 | |||
| JP2003017627A | 2003-01-17 |
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