To obtain a multilayered resist structure, capable of yielding stabilized film thickness after exposure and development at every position and also capable of yielding a precisely dimensioned three-dimensional fine structure.

This multilayered resist structure 10 is irradiated weakly with UV light 22 using a photomask 21 and successively irradiated with a slightly larger quantity of UV light 24 than that of the UV light 22 using a photomask 23 having a larger area of a light shielding part than the photomask 21 and with a still larger quantity of UV light 26 than that of the UV light 24 using a photomask 25 having a still larger area of a light shielding part than the photomask 23. The multilayered resist structure 10 is then developed with a developer to dissolve the irradiated parts of the photoresist layers 12, 14, 16. Part of each of amorphous silicon layers 13, 15 corresponding to the dissolved region of the upper photoresist layer is also readily dissolved in the developer and a resist structure 27 having the desired steps is formed. By utilizing this resist structure 27, the objective three-dimensional fine structure is manufactured.