PURPOSE: To provide color separating and reading capacity for more than two colors in a multiple color image sensor which employs a semiconductor for converting a light signal into an electric signal by forming at least 2 P-N junction which continuously varies in the depth from a light incident surface.

CONSTITUTION: The distances of the first and second P-N junctions 27 and 28 from a silicon oxidized film 20 are formed differently. When lights having various wavelengths are incident from above the silicon oxidized film 20 in this state, the wavelength distributions of the lights which arrive at the first and second P-N junctions 27 and 28 become different, and the relative sensitivity of the first and second photodiodes 29 and 30 for the wavelengths become different.