Title:
MULTIPOLAR FIELD ELECTRON EMISSION DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3235172
Kind Code:
B2
Abstract:
PURPOSE: To enable high input resistance, a linear transmission characteristic and high mutual conductance by providing a cathode electrode, a gate electrode, and an anode electrode, and providing a control electrode between cathode and anode.
CONSTITUTION: A gate electrode 5 comprising an Mo thin film and a control electrode 6 are provided on the surface of a plane substrate 1 of quartz. A banded insulating layer 2 comprising a thin film of silicon dioxide is provided adjacent the gate electrode 5 and the control electrode 6 and a cathode electrode 3 having overhanging emission protrusions 4 is provided on the surface of the banded insulating layer 2 located adjacent the gate electrode 5. An anode electrode 7 is provided on the surface of the banded insulating layer 2 located adjacent the control electrode 6. A power amplifier of high input resistance, a linear transmission characteristic and high mutual conductance can thus be obtained.
Inventors:
Hiroshi Komatsu
Application Number:
JP8038092A
Publication Date:
December 04, 2001
Filing Date:
March 02, 1992
Export Citation:
Assignee:
Seiko Epson Corporation
International Classes:
H01J1/304; H01J1/46; H01J1/52; H01J3/08; H01J3/40; H01J9/02; H01J19/24; H01J19/38; H01J21/10; (IPC1-7): H01J21/06; H01J1/304
Domestic Patent References:
| JP2226635A | ||||
| JP340332A | ||||
| JP1715096Y1 |
Attorney, Agent or Firm:
Naoto Kan (1 person outside)
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