Title:
カチオン系分光増感剤で分光増感されたn-型金属酸化物半導体
Document Type and Number:
Japanese Patent JP2005538519
Kind Code:
A
Abstract:
A layer configuration comprising a layer of a nano-porous n-type metal oxide semiconductor with a band-gap of greater than 2.7 eV, an adsorbed cationic spectral sensitizer and a coadsorber capable of enhancing the adsorption of a cationic spectral sensitizer on an n-type metal oxide semiconductor; and a process for preparing this layer configuration comprising the steps of: providing a layer of a nano-porous n-type metal oxide semiconductor with a band-gap of greater than 2.7 eV, adsorbing a coadsorber on the nano-porous n-type metal oxide semiconductor layer and adsorbing a cationic spectral sensitizer on the nano-porous n-type metal oxide semiconductor layer.
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Inventors:
Andreessen, Hieronymus
Currant, paul
Currant, paul
Application Number:
JP2004535036A
Publication Date:
December 15, 2005
Filing Date:
September 12, 2002
Export Citation:
Assignee:
Aghua-Gevert
International Classes:
H01L31/04; H01G9/20; H01L51/30; H01M14/00; H01L51/00; H01L51/42; (IPC1-7): H01M14/00; H01L31/04
Attorney, Agent or Firm:
Heikichi Odashima