Title:
MANUFACTURE OF THIN FILM IN HETEROJUNCTION STRUCTURE UTILIZING V-GROOVE
Document Type and Number:
Japanese Patent JP2599898
Kind Code:
B2
Abstract:
PURPOSE: To provide a stainless, no-potential heterojunction thin film by remov ing an oxide film and a different kind of thin film from a V-groove part by using a selective dry etching method and then removing the remaining film of oxide.
CONSTITUTION: On the surface of a single-crystal thin film 1, a pattern is formed which includes lines repeated at specific intervals. Then etching is carried out to form grooves (V-grooves), which are repeated at intervals corresponding to the line pattern and is sectioned into a V-shape on the surface of the single- crystal thin film 1. On this surface, a different kind of thin film 2 in a V-groove pattern, having a grating mismatched with the thin film 1 is grown. The majority or the whole of grating mismatching potential is locally distributed because of the presence of the V-grooves. On the different kind of thin film 2, an oxide film 3 is vapor-deposited. Then the oxide film 3 and the different kind of thin film 2 at the V-groove part where the potentials are locally distributed are removed, and furthermore the oxide film 3 is removed.
Inventors:
Lee Seongchang
Youn Zin
Kinsuke
Ginger Aimoto
Youn Zin
Kinsuke
Ginger Aimoto
Application Number:
JP28490994A
Publication Date:
April 16, 1997
Filing Date:
November 18, 1994
Export Citation:
Assignee:
Korea Electronics and Communications Research Institute
International Classes:
B82Y10/00; B82Y40/00; H01L21/20; H01L21/203; (IPC1-7): H01L21/20; H01L21/203
Domestic Patent References:
| JP1312821A |
Attorney, Agent or Firm:
Kazuko Tomita (1 outside)