PURPOSE: To very stably control the temp. of a substrate during film formation by allowing gas to flow to the rear side of the substrate, fitting a heater in a shutter and heating the substrate before film formation.

CONSTITUTION: When a Ta film having low stress is formed on a substrate, RF power is set at about 1.0kW, the pressure of gaseous Xe as sputtering gas 1 at about 0.5Pa and the temp. of the substrate at about 200°C. In order to keep the substrate at about 200°C, gaseous Xe is allowed to flow at about 180°C to the rear side of the substrate and the temp. of the substrate is controlled to about 200°C during film formation by energy given from plasma and vapor-deposited particles and heat given from the gaseous Xe. While a deposition preventing shutter 4 is in a shut state before film formation, the shutter 4 is heated to about 300°C with a built-in heater 3 and the substrate is kept at about 200°C by the heated shutter 4 and gaseous Xe. Since the temp. of the substrate can be kept constant at the time closing a shutter and during film formation, film quality is stabilized.