PURPOSE: To provide the novel transparent electrode film which is extremely low in electric resistivity, has an extremely high transmittance, and is not impaired in etching characteristics by photolithography and the material for this transparent electrode film.
CONSTITUTION: This transparent electrode film consists essentially of indium oxide and contains 1 to 20wt.% tin oxide and 0.05 to 5wt.% zinc oxide. The material for producing the transparent electrode film is a sintered body for vapor deposition of the transparent electrode formed by sintering indium oxide powder contg. 1 to 20wt.% tin oxide powder and 0.05 to 5wt.% zinc oxide powder or the powder for the transparent electrode formed by pulverizing this sintered body or the alloy for vapor deposition of the transparent electrode contg. 60 to 98.5wt.% indium, 1 to 20wt.% tin and 0.1 to 30wt.% zinc.
TANAKA KOICHI
TSUCHIMINE NOBUO
