Title:
【発明の名称】エピタキシヤル反応炉
Document Type and Number:
Japanese Patent JP2588578
Kind Code:
B2
Abstract:
Is described a reactor for chemical vapor deposition of epitaxial layers on crystal substrates, using a medium frequency induction heating system, the power for said heating being provided by a multi-turn coil (16), inducing electrical currents in a susceptor (12) of electrically conductive material, as graphite, said heating being controllable through fine local and readly automaticable current regulators in single turns (18) of said coil (16) and through properly shaping the walls (59) of said susceptor (12) in order to control temperature gradients therein.
Inventors:
BITSUTORIO HOTSUETSUTEI
FURANKO PURETEI
PIERUJOBANNI HOTSUJI
FURANKO PURETEI
PIERUJOBANNI HOTSUJI
Application Number:
JP9935488A
Publication Date:
March 05, 1997
Filing Date:
April 23, 1988
Export Citation:
Assignee:
ERU PII II SPA
International Classes:
C23C16/46; C30B25/10; H01L21/205; (IPC1-7): H01L21/205; C23C16/46; C30B25/10
Domestic Patent References:
JP4732777A | ||||
JP63278222A | ||||
JP6136924A | ||||
JP636725U |
Attorney, Agent or Firm:
Heiyoshi Odashima