Title:
METHOD OF MANUFACTURING THIN FILM TRANSISTOR
Document Type and Number:
Japanese Patent JP3063018
Kind Code:
B2
Abstract:
PURPOSE: To lessen the numbers of manufacturing steps while reinforcing the crystal structure of polysilicon film.
CONSTITUTION: An amorphous silicon thin film substantially containing no hydrogen at all is formed on an insulating substrate 1 and then irradiated with excimer laser to polycrystallize the amorphous silicon thin film into a polysilicon thin film 6. At this time, the polycrystallization by excimer laser irradiation is to be liquid-grown thereby enabling the crystal structure of the polysilicon thin film 6 to be reinforced. Next, after the element separation, a gate insulating film 7 comprising a silicon oxide film and a silicon nitride film is formed on the whole surface. That is, firstly, the silicon film is deposited on the whole surface by sputtering step and then the silicon nitride film is deposited on the surface of the silicon oxide film. When the silicon nitride film is deposited by plasma CVD step, the polysilicon thin film 6 is simultaneously hydrogenated to reduce the dangling bond of the silicon nitride film. Accordingly, the original hydrogenation step can be eliminated.
Inventors:
Haruo Wakai
Application Number:
JP6986892A
Publication Date:
July 12, 2000
Filing Date:
February 19, 1992
Export Citation:
Assignee:
CASIO COMPUTER CO.,LTD.
International Classes:
H01L21/20; H01L21/208; H01L21/265; H01L21/268; H01L21/336; H01L29/78; H01L29/786; (IPC1-7): H01L21/336; H01L21/20; H01L29/786
Domestic Patent References:
| JP36865A | ||||
| JP3257818A | ||||
| JP1187814A | ||||
| JP2224253A | ||||
| JP437144A | ||||
| JP5198507A |
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