Title:
【発明の名称】光起電力素子の製造法
Document Type and Number:
Japanese Patent JP3017394
Kind Code:
B2
Abstract:
PURPOSE:To provide a photovoltaic element forming method by which a high- performance photovoltaic element can be formed by using such a hydrogen plasma treatment method that impurities adsorbed to and contained in the internal wall surface of a chamber can be prevented substantially and stable discharge can be obtained. CONSTITUTION:In a photovoltaic element forming method in which two or more pin structures formed by successively piling up a non-single crystal n-type layer 203, non-single crystal i-type n/i buffer layer 251, non-single crystal i-type layer 204, non-single crystal i-type p/i buffer layer 261, and non-single crystal p-type layer 205 upon another are piled up on a substrate, the vicinity of the interface between the layers 205 and 203 to plasma treatment performed by using a hydrogen gas mixed with a gas containing silicon atoms in such a degree that the atoms do not accumulate substantially.
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Inventors:
Masafumi Sano
Keiji Saitoh
Keiji Saitoh
Application Number:
JP9189794A
Publication Date:
March 06, 2000
Filing Date:
April 28, 1994
Export Citation:
Assignee:
Canon Inc
International Classes:
H01L21/205; H01L31/04; (IPC1-7): H01L31/04; H01L21/205
Domestic Patent References:
| JP2177372A | ||||
| JP3136380A | ||||
| JP1103829A | ||||
| JP2177375A | ||||
| JP2177376A | ||||
| JP5864070A | ||||
| JP3200374A | ||||
| JP2177371A | ||||
| JP62159475A |
Attorney, Agent or Firm:
Hisao Fukumori