Title:
SUBSTRATE FOR GAAS SEMICONDUCTOR CHIP AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPH0637207
Kind Code:
A
Abstract:
PURPOSE: To manufacture a substrate which has the thermal expansion coefficient approximate to that of a GaAs semiconductor chip while a suitable heat conductivity is being maintained.
CONSTITUTION: The title substrate for a GaAs semiconductor chip, having a composition of AlN, MgO and Al2O3 which is within the region surrounded by lines cennecting points A to D shown by mol ratio by the three-component triangular diagram mentioned separately, has point A (AlN of 62mol%, MgO of 0mol% and Al2O3 of 38mol%), point B (AlN of 52mol%, MgO of 0mol% and Al2O3 of 48mol%), point C (AlN of 65mol%, MgO of 35mol% and Al2O3 of 0mol%) and point D (AlN of 75mol%, MgO of 25mol% and Al2O3 of 0mol%).
Inventors:
INOUE TORU
Application Number:
JP18840392A
Publication Date:
February 10, 1994
Filing Date:
July 15, 1992
Export Citation:
Assignee:
IBIDEN CO LTD
International Classes:
H01L23/15; (IPC1-7): H01L23/15
Attorney, Agent or Firm:
Hironobu Onda
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