Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH0637276
Kind Code:
A
Abstract:
PURPOSE: To enable a semiconductor device provided with a PN junction for junction capacitance to be enhanced in capacity without increasing an element region in area and producing a junction leakage.
CONSTITUTION: A semiconductor device is possessed of a PN junction for junction capacitance, where a PN junction 14 is composed of a certain conductivity type region demarcated by a U-shaped groove 6 formed in a certain conductivity type semiconductor layer 3 and an opposite conductivity type region 8 provided along the side wall of the groove 6 in the certain conductivity type region.
Inventors:
WATARI KIYOTO
Application Number:
JP18849492A
Publication Date:
February 10, 1994
Filing Date:
July 16, 1992
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L27/04; H01L21/822; H01L21/8242; H01L27/10; H01L27/108; (IPC1-7): H01L27/108; H01L27/04
Attorney, Agent or Firm:
Teiichi
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