Title:
MANUFACTURE OF BURIED STRUCTURE SEMICONDUCTOR LASER
Document Type and Number:
Japanese Patent JP3047049
Kind Code:
B2
Abstract:
PURPOSE: To materialize the condition that an n-type InP layer does not grow on the mesa structure, and manufacture a high-performance semiconductor laser by the burying growth by the method of organic metal vapor growth by one time using the mesa structure without a selective mask, by using the high-concentration n-type InP using group VI dopant such as Se, etc., at the time of burying growth of mesa structure.
CONSTITUTION: An active layer 2 and a p-type InP clad layer 3 are stacked on the substrate, where an n-type InP buffer layer 1b is made on the n-type InP semiconductor substrate 1a, by organic metal vapor growth method. And the surface of this substrate is masked in the shape of a mask, and the clad layer 3, the active layer 2, and the buffer layer 1b are etched selectively so as to make mesa structure. Then, the mask on the mesa structure is removed, and a p-type InP current block layer 5, an Se dopant n-type InP current shut-in layer 6, a p-type InP clad layer 7, and a p-type cap layer 8 are stacked in order all over the surface of the substrate by organic metal vapor growth method.
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Inventors:
Yasuhiro Kondo
Application Number:
JP28547091A
Publication Date:
May 29, 2000
Filing Date:
October 07, 1991
Export Citation:
Assignee:
Nippon Telegraph and Telephone Corporation
International Classes:
H01S5/00; H01S5/223; (IPC1-7): H01S5/223
Domestic Patent References:
| JP63177493A |
Attorney, Agent or Firm:
Masaki Yamakawa