Title:
SEMICONDUCTOR LASER
Document Type and Number:
Japanese Patent JPH0685403
Kind Code:
A
Abstract:
PURPOSE: To attain the reduction of temperature dependency by imparting a reflecting means or lattice, which is advantageous for long wavelengths by the loss that is decreased with the increase in optical wavelength, and thereby obtaining the total cavity loss. CONSTITUTION: A semiconductor layer 12 in the optical active region that is present between an N-type semiconductor layer 11 and a P-type semiconductor layer 13 is formed and made to be a laser-cavity part, which mutually acts with the light generated with the semiconductor layer 12. This part is the facet, which is polished so that horizontal end surfaces 14 and 15 of a laser 9 impart optical feedback. Electric contact means 16 and 17 are provided so as to flow the current passing a continuous layer in the lateral direction for generating the laser light in the semiconductor layer 12. Then, a layer 18-a layer 25 are made to be the alternate layers of silicon dioxide and silicon. Thus, the laser, wherein temperature dependency is reduced so that the loss that is reduced with the increase in wavelength is generated at about 85 deg.C is obtained.
Inventors:
UONNTEIEN SAN
Application Number:
JP35495092A
Publication Date:
March 25, 1994
Filing Date:
December 18, 1992
Export Citation:
Assignee:
AMERICAN TELEPHONE & TELEGRAPH
International Classes:
H01S5/028; H01S5/00; H01S5/12; (IPC1-7): H01S3/18
Domestic Patent References:
| JPS54993A | 1979-01-06 | |||
| JPH01184893A | 1989-07-24 |
Attorney, Agent or Firm:
Hirofumi Mimata
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