Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3024387
Kind Code:
B2
Abstract:
PURPOSE: To prevent the hillock of Al without increasing resistance and enabling the formation of the anode oxide film of a low leak current so as to suppress the short circuit trouble between a gate electrode and a source electrode by forming the gate electrode of the TFT of an active matrix substrate, which constitutes a liquid crystal display, using the two layer structure where pure Al lies in the lower layer and Al containing anodizable impurities lies in the upper layer.
CONSTITUTION: A gate electrode consisting of aluminum 12a, where Si is added, and aluminum 12b, which contains 2at.% Ta, is formed on a glass substrate 11, and an aluminum oxide gate insulating layer 13 is formed to cover the gate electrode by anodization method, and an amorphous silicon semiconductor layer 15 is formed through a silicon nitride gate insulating film 14, and a transparent display electrode 18 for applying voltage to liquid crystal is formed. And, source and drain electrodes 7a and 7b made of titanium and aluminum are formed through amorphous silicon semiconductor layers 6a and 6b containing phosphorus, and the drain electrode 7b is connected to the transparent display electrode 18.
Inventors:
Ikunori Kobayashi
Kazuyoshi Nakamura
Koji Matsunaga
Mamoru Takeda
Tomizo Matsuoka
Kazuyoshi Nakamura
Koji Matsunaga
Mamoru Takeda
Tomizo Matsuoka
Application Number:
JP25259392A
Publication Date:
March 21, 2000
Filing Date:
September 22, 1992
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
G02F1/136; G02F1/1365; G02F1/1368; H01L21/336; H01L29/78; H01L29/786; (IPC1-7): H01L29/786; G02F1/1365; H01L21/336
Domestic Patent References:
| JP1120068A | ||||
| JP6435421A | ||||
| JP335524A | ||||
| JP4116524A | ||||
| JP4299865A | ||||
| JP4329675A |
Attorney, Agent or Firm:
Fumio Iwahashi (2 others)