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Title:
PRODUCTION OF THIN POLYPERINAPHTHALENE FILM
Document Type and Number:
Japanese Patent JP3049534
Kind Code:
B2
Abstract:

PURPOSE: To produce a high-quality thin polyperinaphthalene film of a size sufficient to examine its basic properties by forming the film by using a specified method.
CONSTITUTION: A thin polyperinaphthalene film represented by the structural formula of formula III is formed on the surface of a substrate from perilene of the formula I and perilenetetracarboxylic acid having a structural the formula II or from their derivatives by the chemical vapor-phase deposition method. Specifically, the starting materials are converted into a vapor phase by heating, fed into the reaction zone in which a substrate is placed and reacted there to effect agglomeration and deposition on the substrate. Examples of the derivatives used include perilenetetracarboxylic dianhydride and perilenetetracarboxylic imide. In the above reaction, the starting materials are heated to 40-600°C, and the substrate is heated to 300-450°C.


Inventors:
Hiroaki Kamo
Masako Yudasaka
Rie Kikuchi
Yoshimasa Ohki
Application Number:
JP5627494A
Publication Date:
June 05, 2000
Filing Date:
March 25, 1994
Export Citation:
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Assignee:
Japan Science and Technology Agency
Matsushita Electric Industrial Co., Ltd
International Classes:
C08G61/10; C08G61/00; (IPC1-7): C08G61/10
Domestic Patent References:
JP5274919A
JP4218209A
JP49123332A
JP61197492A
JP6168385A
JP60167316A
JP6356179B2
Attorney, Agent or Firm:
Hiroshi Tanaka



 
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