Title:
FORMATION OF PROTECTIVE FILM ON COMPOUND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3033493
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prevent impurities from intruding into a semiconductor substrate and to form a protective film of good quantity by a method wherein a compound semiconductor device is put in a vacuum state at a temperature lower than the film-forming temperature of the protective film, then, after the temperature of the device is made to rise up to the film-forming temperature of the protective film, the protective film is formed on the surface of the device.
SOLUTION: A compound semiconductor device is put in a vacuum state at a temperature lower than the film-forming temperature of a protective film, then, after the temperature of the device is made to rise up to the film-forming temperature of the protective film, the protective film is formed on the surface of the device. In the case where this method is applied, it is preferable that a temperature lower than the film-forming temperature or a first temperature is set at a temperature of 300°C or lower. Moreover, the protective film can be formed into one kind of a compound film consisting of either of a compound containing Si and O and a compound containing Si and N, and the device can be form into a device having a heterojunction containing one or more kind of In, Ga, Al, As, P or Sb.
Inventors:
Akio Wakeshima
Application Number:
JP14943796A
Publication Date:
April 17, 2000
Filing Date:
June 11, 1996
Export Citation:
Assignee:
NEC
International Classes:
C23C16/44; H01L21/31; H01L21/316; H01L21/318; H01L21/338; H01L29/778; H01L29/812; (IPC1-7): H01L21/316; C23C16/44; H01L21/31; H01L21/318; H01L21/338; H01L29/778; H01L29/812
Domestic Patent References:
| JP6377139A | ||||
| JP6477942A | ||||
| JP4171822A | ||||
| JP7173633A | ||||
| JP766150A | ||||
| JP61251140A | ||||
| JP61248432A | ||||
| JP311635A |
Attorney, Agent or Firm:
Nobuo Takahashi (3 outside)