PURPOSE: To prevent the damage at dry etching on manufacturing process and improve reliability by using specified materials for an electrode layer and a dielectric layer.

CONSTITUTION: A lower electrode layer 2 consisting of Ta is formed on a glass base 1 by means of sputtering. Ta2O5 is sputtered thereon to form a lower dielectric layer 3 and an upper dielectric layer 5. The dielectric layer 5 is formed on an EL light emitting layer 4 in which ZnS:Mn is formed on the dielectric layer 3 by means of EB evaporation. Then, Ta is formed thereon by means of sputtering to form an upper electrode layer 6. The resulting continuously accumulated material is etched into a determined form by photolithography to form an EL end surface light emitting element having a plurality of pixels. Thus, the generation threshold of element can be reduced to near the half in a conventional product to reduce drive applying voltage about 1/2 of the conventional, and a material excellent also in reliability can be provided.