Title:
PRODUCTION OF ALUMINUM NITRIDE POWDER
Document Type and Number:
Japanese Patent JPH0733412
Kind Code:
A
Abstract:
PURPOSE: To easily and industrially obtain high purity homogeneous crystalline aluminum nitride powder having a grain shape arbitrarily controlled in a certain range, a low oxygen content and high heat conductivity and very excellent as stock for a semiconductor substrate.
CONSTITUTION: An organoaluminum compd. and ammonia are brought into a vapor phase reaction and the resulting amorphous aluminum nitride powder is crystallized at 1,300-1,800°C in an inert gaseous atmosphere and then decarbonized by heating at. 700-1,150°C in dry air.
Inventors:
TANAKA MASAO
WAKIMURA KAZUO
SUDOU KAZUTO
YAMAZAKI MASATO
WAKIMURA KAZUO
SUDOU KAZUTO
YAMAZAKI MASATO
Application Number:
JP17773293A
Publication Date:
February 03, 1995
Filing Date:
July 19, 1993
Export Citation:
Assignee:
MITSUI TOATSU CHEMICALS
International Classes:
C01B21/072; (IPC1-7): C01B21/072
Next Patent: ALUMINUM NITRIDE POWDER AND ITS PRODUCTION