PURPOSE: To provide a semiconductor device which is capable of etching properly and forming a wiring layer at a fine span.

CONSTITUTION: In terms of a semiconductor device having first wirings 1a, 1b, 1c and 1d oriented and laid out in one direction at a specified span on the surface of a semiconductor substrate, a second wiring 2 is installed on the substrate in such a fashion that the second wiring layer may keep a clearance from, and what is more, encircle the first wiring layers. This second wiring layer 2 has a projected part T projecting at the clearance portion so as to narrow the mutual clearance with the end portion of the first wirings. The projected part T, since it is designed to advance into the clearance portion when a plasma CVD film is mounted or etching is carried out, is protected from the formation of a void opening portion on a passivation film in a subseequent process or the generation of bubbles in a photoresist.