Title:
PHOTOSENSOR SYSTEM
Document Type and Number:
Japanese Patent JP3019632
Kind Code:
B2
Abstract:
PURPOSE: To provide a photosensor system in which a high density can be implemented by providing both a sensor function and a selective transistor function to one photosensor.
CONSTITUTION: In photosensors 1, bottom gate electrodes BG are formed on insulating substrates and are covered with bottom gate insulating films. Semiconductor layers are formed on the bottom gate insulating films, and a source electrode S and a drain electrode D are formed so as to place the semiconductor layers between the electrodes. The electrodes S and D are covered with top gate insulating films, and top gate electrodes TG are formed on the top gate insulating films in a position opposite to the bottom gate electrodes BG. Thus, the photosensors 1 have a structure in which a reverse stagger type thin film transistor and a coplanar type thin film transistor are combined. When a top gate voltage VTG is controlled to 0V and -20V, a sense state and a reset state can be controlled. Also, when a bottom gate voltage VBG is controlled to 0V and +10V, a selection state and a non-selection state can be controlled.
Inventors:
Hiroyasu Yamada
Application Number:
JP30458792A
Publication Date:
March 13, 2000
Filing Date:
October 16, 1992
Export Citation:
Assignee:
CASIO COMPUTER CO.,LTD.
International Classes:
H01L27/12; H01L27/146; H01L31/0392; H01L31/10; H01L31/113; (IPC1-7): H01L31/10; H01L27/146
Domestic Patent References:
| JP362965A | ||||
| JP5235398A |
Attorney, Agent or Firm:
Hiroshi Arafune