PURPOSE: To provide a cleaning method of a semiconductor substrate which exhibits higher safety to human bodies and environments and excellent cleaning effect, and which is with specific volatile methyl polysiloxanes, and thereafter performing an alcohol substitution and washing the semiconductor substrate.
CONSTITUTION: A wafer is subjected to ultrasonic cleaning using a cleaning solution composed of a mixture of linear methyl polysiloxane represented by a formula I and a cyclic methyl polysiloxane represented by a formula II. In the formula I m=0-4 and in the formula II n=3-6. Then, ultrasonic cleaning with ethanol is performed, and further ultrasonic cleaning with water is performed, and finally IPA paper drying (a process of dewatering and drying in a state where isopropyl alcohol is heated to about 120-150°C.) is performed. Hereby, a satisfactory cleaning result is ensured compared with prior art 1,1,1- trichloroethane.
HIGUCHI SUSUMU
TAMURA YUKI
OTAKI NORIO
KUWATA SATOSHI
SHINETSU HANDOTAI KK
| JPH04124289A | 1992-04-24 |