PURPOSE: To provide the device which lessens the generation of impurities and secondary products, can maintain the generation of plasma in a high vacuum, has a high ionization rate of gas for treatment and can execute an ion treatment at a high rate.
CONSTITUTION: A high-vacuum discharge system 17 is connected to a vacuum discharge port 3 of the vacuum chamber 1 of the device for ionizing the gas for treatment introduced into the vacuum chamber 1 by plasma and forming a film on a substrate 7 prepd. in the vacuum chamber 1 or etching the substrate by the ions generated in such a manner. A helical antenna 15 consisting of a helical coil 13 which has the central axis of the coil orthogonal with the plate plane of the substrate 7 and is connected to a highfrequency oscillation source 14 is provided in front of the substrate 7. As a result, high-density plasma can be generated in the high vacuum and the ionization rate is greatly improved. The execution of the ion treatment at a high rate in the high vacuum is possible and impurities and secondary products are less produced, and therefore, the ion treatment which is good in film quality and less generates defective articles by dust is executed.
MIYAKE MASAJI
TAKAGI KENICHI
| JPH0237698A | 1990-02-07 | |||
| JPS5815446A | 1983-01-28 |