PURPOSE: To obtain a single crystalline silicon carbide layer with ordinary wafer radius satisfying maximum required conditions of semiconductor technology by removing a silicon layer without previously cooling after epitaxially growing the single crystalline silicon carbide layer only on one side of a single crystalline silicon layer.

CONSTITUTION: A single crystalline silicon substrate 1 placed on a substrate holder 2 is heated in a chamber and one side of the substrate 1 is subjected to flashing with an inert gas. A silicon carbide epitaxial layer 4 is made epitaxially grow on the silicon substrate 1. Then, epitaxial growth of a thicker silicon carbide career layer 5 is more rapidly caused by plasma support or the like. At this time, the silicon carbide layer may grow to a polycrystalline body. Then the silicon substrate 1 is removed by vaporization or the like to remain a single crystalline silicon carbide semiconductor layer 4 on the polycrystalline silicon carbide carrier layer 5.