【発明の名称】シリコン・オン・サファイア・ウエーハの製造方法 - International Business Machines Corporation

Title:

【発明の名称】シリコン・オン・サファイア・ウエーハの製造方法

Document Type and Number:

Japanese Patent JP3083725

Kind Code:

B2

Abstract:

A method for fabricating a silicon-on-sapphire wafer for processing by silicon-wafer-processing equipment. A layer is deposited on a backside of a silicon-on-sapphire wafer, the layer having optical and electrical properties of silicon, wherein the silicon-on-sapphire wafer may be sensed by a sensor designed to sense a presence of a silicon wafer.

Inventors:

James El Egley
George M. Gut
Daniel Jay Koch
Michael A. Mathusevic

Application Number:

JP3192595A

Publication Date:

September 04, 2000

Filing Date:

February 21, 1995

Export Citation:

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Assignee:

International Business Machines Corporation

International Classes:

H01L27/12; H01L21/02; H01L21/205; H01L21/67; (IPC1-7): H01L27/12; H01L21/02

Domestic Patent References:

JP57153445A

Attorney, Agent or Firm:

Jiro Yamamoto (2 outside)

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