Title:
PATTERN FORMING METHOD
Document Type and Number:
Japanese Patent JP3013337
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prevent deterioration in a pattern form by increasing the heat resistance of a resist film comprising a chemical amplification resist.
SOLUTION: A chemical amplification resist comprising a copolymer of NISS (1,2,3,4-tetrahydronaphthylidene imino-p-styrene sulfonate) and vinylphenol protected with t-BOC(t-butoxycarbonyl group) is applied on a silicon substrate 100 to form a resist film 101. The resist film 101 is exposed according to a pattern to produce sulfonic acid by decomposition of the NISS in the exposed part 101a. Then the resist film 101 is heat treated to deblock the t-BOC in the exposed part 101a to produce phenol-type hydroxyl groups. Water vapor and vapor of methyltriethoxysilane 104 are supplied to the surface of the resist film 101 to selectively form a polysiloxane layer 105 in the exposed part 101a. Then the polysiloxane layer 105 is used as a mask to etch the resist film 101 with O2 plasma 106 to form a resist pattern 107.
Inventors:
Takahiro Matsuo
Application Number:
JP2109298A
Publication Date:
February 28, 2000
Filing Date:
February 02, 1998
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
G03F7/004; G03F7/039; G03F7/20; G03F7/36; G03F7/38; H01L21/027; H01L21/302; H01L21/3065; (IPC1-7): G03F7/039; G03F7/004; G03F7/36; G03F7/38; H01L21/027; H01L21/3065
Domestic Patent References:
| JP876385A | ||||
| JP5150459A | ||||
| JP934113A | ||||
| JP9230606A | ||||
| JP422957A |
Attorney, Agent or Firm:
Hiroshi Maeda (2 outside)