Title:
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3003422
Kind Code:
B2
Abstract:
PURPOSE: To manufacture semiconductor devices, with a higher yield rate than before, having high long-term reliability and excellent electric characteristics.
CONSTITUTION: A first conductive film layer 5 and a second conductive film layer 6 are formed successively in a layer-to-layer connecting hole 4. And a first low-resistance metallic film 8 having a thickness nearly equal to a third of the diameter of this layer-to-layer connecting hole is formed on this second conductive film layer 6. This first low-resistance metallic film 8 is melted by laser irradiation, and the layer-to-layer connecting hole 4 is filled with it. Besides, a third conductive film layer 9, a fourth conductive film layer 10, and a second low-resistance metallic film 12 are formed successively on this first low-resistance metallic film 8.
Inventors:
Iku Mikagi
Application Number:
JP26347192A
Publication Date:
January 31, 2000
Filing Date:
October 01, 1992
Export Citation:
Assignee:
NEC
International Classes:
H01L21/28; H01L21/3205; H01L21/768; H01L23/52; H01L23/522; (IPC1-7): H01L21/768; H01L21/28; H01L21/3205
Domestic Patent References:
| JP3270234A | ||||
| JP2168625A | ||||
| JP3255623A | ||||
| JP4127524A | ||||
| JP4245457A | ||||
| JP5315336A |
Attorney, Agent or Firm:
Masanori Fujimaki