PURPOSE: To improve the latchup durability by adding a protective element for a resistive component to a potential input terminal without giving an adverse effect onto the generation of the divided potential obtained through resistance division.

CONSTITUTION: A transfer gate TG consists of a MOS transistor(TR) of a P substrate and GO-GM transfer gates TG near a low potential input terminal 2 are formed by transfer gates of NMOS only and other GM+1-Gn transfer gates TG are formed by transfer gates of CMOS as a feature. Moreover, when the MOS TR is formed by an N substrate, transfer gates of a high potential input terminal are formed by transfer gates of PMOS only and other transfer gates are formed by CMOS transfer gates as a feature.